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| Datasheet File OCR Text: |
| NTE464 (P-Ch) & NTE465 (N-Ch) Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications Absolute Maximum Ratings: Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.56mW/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Drain-Source Breakdown Voltage Zero-Gate-Voltage Drain Current V(BR)DSX ID = -10A, VGS = 0 IDSS IGSS VGS(Th) VDS(on) ID(on) VDS = -10V, VGS = 0, TA = +25C VDS = -10V, VGS = 0, TA = +150C Gate Reverse Current ON Characteristics Gate Threshold Voltage Drain-Source On-Voltage On-State Drain Current VDS = -10V, ID = -10A ID = -2mA, VGS = -10V VGS = -10V, VDS = -10V -1 - -3 - - - -5 -1 - V V mA VGS = 30V, VDS = 0 -25 - - - - - - - - -10 -10 10 V nA A pA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Small-Signal Characteristics Drain-Source Resistance NTE464 NTE465 Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Drain-Substrate Capacitance NTE464 NTE465 Switching Characteristics Turn-On Delay Rise Time Turn-Off Delay Fall Time td1 tr td2 tf ID = -2mA, VDS = -10V, VGS = -10V - - - - - - - - 45 65 60 100 ns ns ns ns |yfs| Ciss Crss Cd(sub) VDS = -10V, ID = 2mA, f = 1kHz VDS = -10V, VGS = 0, f = 140kHz VDS = 0, VGS = 0, f = 140kHz VD(SUB) = -10V, f = 140kHz rds(on) VGS = -10V, ID = 0, f = 1kHz - - 1000 - - - - - - - - - - - 600 300 - 5 1.3 4 5 mhos pF pF pF pF Symbol Test Conditions Min Typ Max Unit .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate Source Drain 45 Case .040 (1.02) |
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